RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3200C14-16GTZSK 16GB
Compare
Samsung M378B5673EH1-CF8 2GB vs G Skill Intl F4-3200C14-16GTZSK 16GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
G Skill Intl F4-3200C14-16GTZSK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Reasons to consider
G Skill Intl F4-3200C14-16GTZSK 16GB
Report a bug
Below the latency in the PassMark tests, ns
26
28
Around -8% lower latency
Faster reading speed, GB/s
19
12.7
Average value in the tests
Faster write speed, GB/s
17.1
7.5
Average value in the tests
Higher memory bandwidth, mbps
17000
8500
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3200C14-16GTZSK 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
26
Read speed, GB/s
12.7
19.0
Write speed, GB/s
7.5
17.1
Memory bandwidth, mbps
8500
17000
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1066 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1988
4022
Samsung M378B5673EH1-CF8 2GB RAM comparisons
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB
G Skill Intl F4-3200C14-16GTZSK 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA81GS6CJRJR-VK 8GB
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Samsung M471B5173DB0-YK0 4GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hewlett-Packard 7EH61AA# 8GB
A-DATA Technology AD73I1C1674EV 4GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMH32GX4M2E3200C16 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CM4X8GF2666C16K4 8GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
Kingston 2GB-DDR2 800Mhz 2GB
Kingston KHYXPX-MID 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-2133C15-8GNT 8GB
Avant Technology F6451U64F9333G 4GB
Kingston KF3200C20S4/32GX 32MB
takeMS International AG TMS2GB264D083805EV 2GB
Kingston 9965745-002.A00G 16GB
Samsung M471B5673FH0-CF8 2GB
V-Color Technology Inc. TN416G26D819-SB 16GB
Report a bug
×
Bug description
Source link