RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5673EH1-CF8 2GB
Kingston 9905622-075.A00G 8GB
Compare
Samsung M378B5673EH1-CF8 2GB vs Kingston 9905622-075.A00G 8GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
Kingston 9905622-075.A00G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
30
Around 7% lower latency
Faster write speed, GB/s
7.5
7.2
Average value in the tests
Reasons to consider
Kingston 9905622-075.A00G 8GB
Report a bug
Faster reading speed, GB/s
13.7
12.7
Average value in the tests
Higher memory bandwidth, mbps
17000
8500
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Kingston 9905622-075.A00G 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
30
Read speed, GB/s
12.7
13.7
Write speed, GB/s
7.5
7.2
Memory bandwidth, mbps
8500
17000
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1066 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1988
2325
Samsung M378B5673EH1-CF8 2GB RAM comparisons
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB
Kingston 9905622-075.A00G 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M395T2863QZ4-CF76 1GB
Samsung M471A2K43CB1-CRC 16GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology CB8GU2400.C8D 8GB
SK Hynix HYMP112U64CP8-S6 1GB
G Skill Intl F4-3000C16-16GSXFB 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4X16GC3600C18K2D 16GB
Samsung M393B5270CH0-CH9 4GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Samsung M471B5173QH0-YK0 4GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB
PNY Electronics PNY 2GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Crucial Technology CT25664AA800.M16FG 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
Kingston 99U5458-008.A00LF 4GB
G Skill Intl F4-4266C17-16GVKB 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-4266C19-8GTZSW 8GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-4000C18-8GTZ 8GB
Report a bug
×
Bug description
Source link