RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5673FH0-CH9 2GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Compare
Samsung M378B5673FH0-CH9 2GB vs Micron Technology 16ATF2G64HZ-2G6H1 16GB
Overall score
Samsung M378B5673FH0-CH9 2GB
Overall score
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673FH0-CH9 2GB
Report a bug
Faster write speed, GB/s
9.5
8.8
Average value in the tests
Reasons to consider
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Report a bug
Below the latency in the PassMark tests, ns
33
35
Around -6% lower latency
Faster reading speed, GB/s
14.7
14.4
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673FH0-CH9 2GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
35
33
Read speed, GB/s
14.4
14.7
Write speed, GB/s
9.5
8.8
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2321
2498
Samsung M378B5673FH0-CH9 2GB RAM comparisons
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673FH0-CH9 2GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905734-059.A00G 16GB
Samsung M378B5773DH0-CH9 2GB
Kingston K6VDX7-HYD 8GB
Kingston 9965516-112.A00LF 16GB
Essencore Limited KD48GS88C-32N2200 8GB
Samsung M471B5173DB0-YK0 4GB
Essencore Limited IM48GU88N26-GIIHA 8GB
A-DATA Technology AM1U16BC4P2-B19H 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology BLS4G4D240FSA.8FBD 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Apacer Technology 78.BAGN8.40C0B 4GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Corsair CMWB8G1L3200K16W4 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Apacer Technology 78.CAGPP.ARC0B 8GB
Samsung M378B5273CH0-CH9 4GB
Kingston CBD26D4U9S8ME-8 8GB
Report a bug
×
Bug description
Source link