RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5773DH0-CH9 2GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Compare
Samsung M378B5773DH0-CH9 2GB vs Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Overall score
Samsung M378B5773DH0-CH9 2GB
Overall score
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5773DH0-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
39
83
Around 53% lower latency
Reasons to consider
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Report a bug
Faster reading speed, GB/s
14.3
11.7
Average value in the tests
Faster write speed, GB/s
8.1
7.2
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5773DH0-CH9 2GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
39
83
Read speed, GB/s
11.7
14.3
Write speed, GB/s
7.2
8.1
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1749
1774
Samsung M378B5773DH0-CH9 2GB RAM comparisons
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMK8GX4M2A2666C16 4GB
SK Hynix HYMP112S64CP6-S6 1GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 9905702-019.A00G 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3200C14-8GVK 8GB
Samsung M471B1G73DB0-YK0 8GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
A-DATA Technology DDR4 2400 16GB
Mushkin MR[A/B]4U346GJJM8G 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-2400C17-8GSXK 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-2800C15-16GVR 16GB
Kingston 99U5584-005.A00LF 4GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Kingston 99P5723-006.A00G 8GB
Crucial Technology CT102464BF160B.C16 8GB
Kllisre 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Tanbassh 8G 2666MHZ 8GB
A-DATA Technology DQVE1908 512MB
Kingston KF2666C13D4/8GX 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Team Group Inc. DDR4 3000 4GB
Report a bug
×
Bug description
Source link