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Samsung M378T5663QZ3-CF7 2GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Compare
Samsung M378T5663QZ3-CF7 2GB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Overall score
Samsung M378T5663QZ3-CF7 2GB
Overall score
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378T5663QZ3-CF7 2GB
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Faster reading speed, GB/s
4
17.3
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Report a bug
Below the latency in the PassMark tests, ns
34
56
Around -65% lower latency
Faster write speed, GB/s
14.5
1,813.5
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378T5663QZ3-CF7 2GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
34
Read speed, GB/s
4,387.7
17.3
Write speed, GB/s
1,813.5
14.5
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
693
3606
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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