RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-3600C17-4GVK 4GB
Compare
Samsung M378T5663QZ3-CF7 2GB vs G Skill Intl F4-3600C17-4GVK 4GB
Overall score
Samsung M378T5663QZ3-CF7 2GB
Overall score
G Skill Intl F4-3600C17-4GVK 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378T5663QZ3-CF7 2GB
Report a bug
Faster reading speed, GB/s
4
14.8
Average value in the tests
Reasons to consider
G Skill Intl F4-3600C17-4GVK 4GB
Report a bug
Below the latency in the PassMark tests, ns
34
56
Around -65% lower latency
Faster write speed, GB/s
11.5
1,813.5
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-3600C17-4GVK 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
34
Read speed, GB/s
4,387.7
14.8
Write speed, GB/s
1,813.5
11.5
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
693
2588
Samsung M378T5663QZ3-CF7 2GB RAM comparisons
Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB
G Skill Intl F4-3600C17-4GVK 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 78.01G86.9H50C 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT16G4DFRA32A.C16FP 16GB
Crucial Technology CT51264BD160B.C16F 4GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
Crucial Technology CT25664AA800.M16FM 2GB
Golden Empire CL15-17-17 D4-3200 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMK32GX4M4K4000C19 8GB
Kingston HX426C16FB2/8-SP 8GB
Kingston KHYXPX-MIE 8GB
Kingston KVR800D2N6/2G 2GB
V-GEN D4M8GL26A8TS6 8GB
Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
Samsung M378A1K43EB2-CWE 8GB
AMD R9S48G3206U2S 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Essencore Limited IM48GU48A30-GIIHM 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Chun Well Technology Holding Limited MD4U1636181DCW 16G
Kingston 99U5584-001.A00LF 4GB
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
Report a bug
×
Bug description
Source link