RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378T5663QZ3-CF7 2GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Compare
Samsung M378T5663QZ3-CF7 2GB vs Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Overall score
Samsung M378T5663QZ3-CF7 2GB
Overall score
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378T5663QZ3-CF7 2GB
Report a bug
Below the latency in the PassMark tests, ns
56
73
Around 23% lower latency
Faster reading speed, GB/s
4
15.2
Average value in the tests
Reasons to consider
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Report a bug
Faster write speed, GB/s
9.1
1,813.5
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378T5663QZ3-CF7 2GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
73
Read speed, GB/s
4,387.7
15.2
Write speed, GB/s
1,813.5
9.1
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
693
1843
Samsung M378T5663QZ3-CF7 2GB RAM comparisons
Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB RAM comparisons
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMW16GX4M2E3200C16 8GB
Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-3200C18-8GRS 8GB
Avant Technology F6451U64F9333G 4GB
Transcend Information TS1GSH64V4B 8GB
Samsung M378T5663QZ3-CF7 2GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
Crucial Technology CT102464BA160B.M16 8GB
Kingston HP37D4U1S8ME-16XR 16GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3200C16-8GTZRN 8GB
Samsung 1600 CL10 Series 8GB
Kingston XF875V-MIH 8GB
Kingston KHYXPX-HYJ 8GB
Kingston 9965589-024.D01G 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-2400C15Z8GNT 8GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3600C18-16GTZN 16GB
SK Hynix HMT425S6CFR6A-PB 2GB
Kingston 9905744-076.A00G 16GB
Kingston KVR533D2N4 512MB
G Skill Intl F4-3000C15-8GRBB 8GB
Samsung M393B2G70AH0-YH9 16GB
Corsair CMD16GX4M4B3200C15 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
Report a bug
×
Bug description
Source link