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Samsung M386B4G70DM0-CMA4 32GB
Samsung M393A2G40EB2-CTD 16GB

Samsung M386B4G70DM0-CMA4 32GB vs Samsung M393A2G40EB2-CTD 16GB

Overall score
star star star star star
Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Overall score
star star star star star
Samsung M393A2G40EB2-CTD 16GB

Samsung M393A2G40EB2-CTD 16GB

Differences Specifications Comments

Differences

Samsung M386B4G70DM0-CMA4 32GB Reasons to consider
Samsung M386B4G70DM0-CMA4 32GB
Report a bug
  • Faster reading speed, GB/s
    9.7 left arrow 8.5
    Average value in the tests
  • Faster write speed, GB/s
    7.2 left arrow 5.6
    Average value in the tests
Samsung M393A2G40EB2-CTD 16GB Reasons to consider
Samsung M393A2G40EB2-CTD 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    44 left arrow 52
    Around -18% lower latency
  • Higher memory bandwidth, mbps
    21300 left arrow 14900
    Around 1.43 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M386B4G70DM0-CMA4 32GB
Samsung M393A2G40EB2-CTD 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    52 left arrow 44
  • Read speed, GB/s
    9.7 left arrow 8.5
  • Write speed, GB/s
    7.2 left arrow 5.6
  • Memory bandwidth, mbps
    14900 left arrow 21300
Other
  • Description
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    9-10-9-28 / 1866 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2173 left arrow 1660

Samsung M386B4G70DM0-CMA4 32GB RAM comparisons

Team Group Inc. Dark-1866 4GB
Mushkin 994104 8GB

Samsung M393A2G40EB2-CTD 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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