RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Micron Technology 16ATF4G64HZ-3G2B2 32GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
32
Around 19% lower latency
Reasons to consider
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Report a bug
Faster reading speed, GB/s
15.7
12.8
Average value in the tests
Faster write speed, GB/s
13.7
9.0
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
32
Read speed, GB/s
12.8
15.7
Write speed, GB/s
9.0
13.7
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2143
3322
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M391B5673EH1-CH9 2GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Samsung M378B5273CH0-CH9 4GB
Kingston 99U5702-089.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston 9905678-173.A00G 8GB
Samsung M378B5773DH0-CH9 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
A-DATA Technology DQVE1908 512MB
Chun Well Technology Holding Limited D4U0826190B 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology BLS16G4D30CEST.16FD 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Golden Empire CL16-16-16 D4-3000 4GB
AMD AE34G1601U1 4GB
Kingston 8ATF1G64HZ-2G3B2 8GB
Corsair CM2X2048-8500C5D 2GB
Crucial Technology BL8G30C15U4WL.M8FE1 8GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-2133C15-8GSQ 8GB
Corsair VS1GB800D2 1GB
Corsair CMK16GX4M2Z3600C18 8GB
Samsung M393B5170FH0-CH9 4GB
Corsair CMW32GX4M4C3466C16 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
Kingston K1N7HK-ELC 2GB
Corsair CMR64GX4M4C3000C15 16GB
Report a bug
×
Bug description
Source link