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Samsung M391B5673EH1-CH9 2GB
Samsung M378A5244CB0-CVF 4GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Samsung M378A5244CB0-CVF 4GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Samsung M378A5244CB0-CVF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
30
Around 13% lower latency
Reasons to consider
Samsung M378A5244CB0-CVF 4GB
Report a bug
Faster reading speed, GB/s
16
12.8
Average value in the tests
Faster write speed, GB/s
12.3
9.0
Average value in the tests
Higher memory bandwidth, mbps
23400
10600
Around 2.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Samsung M378A5244CB0-CVF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
30
Read speed, GB/s
12.8
16.0
Write speed, GB/s
9.0
12.3
Memory bandwidth, mbps
10600
23400
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
7-7-7-20 / 1333 MHz
19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
Ranking PassMark (The more the better)
2143
2709
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Samsung M378A5244CB0-CVF 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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