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Samsung M393B1K70CH0-YH9 8GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Compare
Samsung M393B1K70CH0-YH9 8GB vs Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Overall score
Samsung M393B1K70CH0-YH9 8GB
Overall score
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1K70CH0-YH9 8GB
Report a bug
Below the latency in the PassMark tests, ns
49
83
Around 41% lower latency
Reasons to consider
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Report a bug
Faster reading speed, GB/s
14.3
10.1
Average value in the tests
Faster write speed, GB/s
8.1
7.8
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1K70CH0-YH9 8GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
49
83
Read speed, GB/s
10.1
14.3
Write speed, GB/s
7.8
8.1
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2070
1774
Samsung M393B1K70CH0-YH9 8GB RAM comparisons
Samsung M393B1K70CH0-CH9 8GB
Samsung M392B1K70CM0-YH9 8GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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