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Samsung M393B2G70BH0-CK0 16GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Compare
Samsung M393B2G70BH0-CK0 16GB vs Micron Technology 18ASF1G72PZ-2G3B1 8GB
Overall score
Samsung M393B2G70BH0-CK0 16GB
Overall score
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B2G70BH0-CK0 16GB
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Higher memory bandwidth, mbps
12800
1900
Around 6.74% higher bandwidth
Reasons to consider
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Report a bug
Below the latency in the PassMark tests, ns
45
54
Around -20% lower latency
Faster reading speed, GB/s
11.7
9.2
Average value in the tests
Faster write speed, GB/s
8.4
8.1
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
54
45
Read speed, GB/s
9.2
11.7
Write speed, GB/s
8.1
8.4
Memory bandwidth, mbps
12800
1900
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-1900, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
no data
Ranking PassMark (The more the better)
2105
2387
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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