RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5170EH1-CH9 4GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
Compare
Samsung M393B5170EH1-CH9 4GB vs Crucial Technology BLS16G4D240FSE.16FBD 16GB
Overall score
Samsung M393B5170EH1-CH9 4GB
Overall score
Crucial Technology BLS16G4D240FSE.16FBD 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5170EH1-CH9 4GB
Report a bug
Reasons to consider
Crucial Technology BLS16G4D240FSE.16FBD 16GB
Report a bug
Below the latency in the PassMark tests, ns
35
51
Around -46% lower latency
Faster reading speed, GB/s
15.4
10.2
Average value in the tests
Faster write speed, GB/s
9.9
7.6
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5170EH1-CH9 4GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
51
35
Read speed, GB/s
10.2
15.4
Write speed, GB/s
7.6
9.9
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2049
2765
Samsung M393B5170EH1-CH9 4GB RAM comparisons
Corsair CMT8GX3M2A1866C9 4GB
G Skill Intl F4-2133C15-16GRS 16GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
AMD AE34G1601U1 4GB
Samsung M393A4K40CB1-CRC 32GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Samsung M386A8K40BMB-CPB 64GB
G Skill Intl F3-1333C9-4GIS 4GB
Shenzhen Xingmem Technology Corp 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
Samsung M386B4G70DM0-CMA4 32GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMD8GX4M2B3200C16 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M378B5773DH0-CH9 2GB
SK Hynix HMAA2GS6AJR8N-XN 16GB
Corsair CMY8GX3M2A2666C10 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N
Kingston 99U5474-028.A00LF 4GB
Asgard VMA45UG-MEC1U2AW1 8GB
Avant Technology F641GU67F9333G 8GB
G Skill Intl F4-2400C15-8GRB 8GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3000C16-8GSXKB 8GB
Report a bug
×
Bug description
Source link