RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5170FH0-CH9 4GB
Corsair CMW32GX4M4D3600C18 8GB
Compare
Samsung M393B5170FH0-CH9 4GB vs Corsair CMW32GX4M4D3600C18 8GB
Overall score
Samsung M393B5170FH0-CH9 4GB
Overall score
Corsair CMW32GX4M4D3600C18 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5170FH0-CH9 4GB
Report a bug
Reasons to consider
Corsair CMW32GX4M4D3600C18 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
49
Around -75% lower latency
Faster reading speed, GB/s
18.3
10
Average value in the tests
Faster write speed, GB/s
15.8
8.2
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5170FH0-CH9 4GB
Corsair CMW32GX4M4D3600C18 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
49
28
Read speed, GB/s
10.0
18.3
Write speed, GB/s
8.2
15.8
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2116
3736
Samsung M393B5170FH0-CH9 4GB RAM comparisons
Samsung M471B5273DH0-CH9 4GB
Samsung M392B1K70CM0-YH9 8GB
Corsair CMW32GX4M4D3600C18 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5170FH0-CH9 4GB
Corsair CMW32GX4M4D3600C18 8GB
Kingston 99U5474-038.A00LF 4GB
Kingston 9965698-001.A00G 16GB
Samsung M471A1K43CB1-CRC 8GB
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Samsung M391B5673EH1-CH9 2GB
Kingston 9905678-138.A00G 8GB
PNY Electronics PNY 2GB
Samsung T471A1K43CB1-CRC 8GB
AMD AE34G1601U1 4GB
Corsair CMR16GX4M2C3600C18 8GB
Corsair CMSX32GX4M2A3200C22 16GB
Corsair CMK32GX4M2E3200C16 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Apacer Technology 78.CAGP7.4020B 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3600C16-32GVK 32GB
Kingston KHX2133C11D3/4GX 4GB
Essencore Limited KD48GU481-26N1600 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Ramaxel Technology RMSA3330ME88HCF-3200 32GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-2133C15-16GIS 16GB
Report a bug
×
Bug description
Source link