RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5170FH0-CH9 4GB
G Skill Intl F4-2133C15-8GNS 8GB
Compare
Samsung M393B5170FH0-CH9 4GB vs G Skill Intl F4-2133C15-8GNS 8GB
Overall score
Samsung M393B5170FH0-CH9 4GB
Overall score
G Skill Intl F4-2133C15-8GNS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5170FH0-CH9 4GB
Report a bug
Reasons to consider
G Skill Intl F4-2133C15-8GNS 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
49
Around -88% lower latency
Faster reading speed, GB/s
14.3
10
Average value in the tests
Faster write speed, GB/s
8.9
8.2
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5170FH0-CH9 4GB
G Skill Intl F4-2133C15-8GNS 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
49
26
Read speed, GB/s
10.0
14.3
Write speed, GB/s
8.2
8.9
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2116
2384
Samsung M393B5170FH0-CH9 4GB RAM comparisons
Samsung M471B5273DH0-CH9 4GB
Samsung M392B1K70CM0-YH9 8GB
G Skill Intl F4-2133C15-8GNS 8GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5170FH0-CH9 4GB
G Skill Intl F4-2133C15-8GNS 8GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CM4X16GE2666C16K8 16GB
ASint Technology SLA302G08-GGNNG 4GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS4G4D240FSB.M8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4D26BFSB.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Smart Modular SF4641G8CK8IEHLSBG 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Samsung M471A2K43DB1-CWE 16GB
A-DATA Technology DDR3 1600 4GB
Ramaxel Technology RMSA3260MH78HAF-2666 8GB
Kingston ACR256X64D3S1333C9 2GB
Golden Empire CL16-18-18 D4-2666 8GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
Kingston 9905403-444.A00LF 4GB
Kingston 99U5663-007.A00G 16GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 99U5663-007.A00G 16GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Report a bug
×
Bug description
Source link