RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5170FH0-CK0 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Compare
Samsung M393B5170FH0-CK0 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Overall score
Samsung M393B5170FH0-CK0 4GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5170FH0-CK0 4GB
Report a bug
Below the latency in the PassMark tests, ns
27
31
Around 13% lower latency
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Report a bug
Faster reading speed, GB/s
12.5
11.8
Average value in the tests
Faster write speed, GB/s
9.4
7.3
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5170FH0-CK0 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
31
Read speed, GB/s
11.8
12.5
Write speed, GB/s
7.3
9.4
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2057
2361
Samsung M393B5170FH0-CK0 4GB RAM comparisons
Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) PSD22G8002 2GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Samsung M393B5170FH0-CK0 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston ACR26D4U9S8ME-8 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMR16GX4M2C3466C16 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Apacer Technology 78.C1GMM.DFW0C 8GB
Kingston 99P5474-014.A00LF 4GB
Transcend Information AQD-SD4U8GE21-SG 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
SK Hynix DDR2 800 2G 2GB
Corsair CMK16GX4M2Z2666C16 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3200C16-16GTZKW 16GB
Corsair CML8GX3M2A1600C9 4GB
Avant Technology W641GU67J5213N8 8GB
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology BLS8G4D240FSA.M16FAD 8GB
Kingston KF552C40-16 16GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Kingston 9905403-156.A00LF 2GB
Kingston 9905678-028.A00G 8GB
Apacer Technology 78.01GA0.9K5 1GB
Kingston 9905702-135.A00G 8GB
Report a bug
×
Bug description
Source link