Samsung M393B5270CH0-CH9 4GB
SK Hynix HMA851U6DJR6N-WM 4GB

Samsung M393B5270CH0-CH9 4GB vs SK Hynix HMA851U6DJR6N-WM 4GB

Overall score
star star star star star
Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Overall score
star star star star star
SK Hynix HMA851U6DJR6N-WM 4GB

SK Hynix HMA851U6DJR6N-WM 4GB

Differences

  • Below the latency in the PassMark tests, ns
    30 left arrow 42
    Around -40% lower latency
  • Faster reading speed, GB/s
    16.3 left arrow 10.6
    Average value in the tests
  • Faster write speed, GB/s
    12.2 left arrow 9.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    23400 left arrow 10600
    Around 2.21 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B5270CH0-CH9 4GB
SK Hynix HMA851U6DJR6N-WM 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    42 left arrow 30
  • Read speed, GB/s
    10.6 left arrow 16.3
  • Write speed, GB/s
    9.0 left arrow 12.2
  • Memory bandwidth, mbps
    10600 left arrow 23400
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • Ranking PassMark (The more the better)
    2423 left arrow 2761
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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