Samsung M395T2863QZ4-CF76 1GB vs INTENSO 4GB

Overall score

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Overall score

INTENSO 4GB

INTENSO 4GB

Differences Specifications Comments

Differences

Samsung M395T2863QZ4-CF76 1GB

Reasons to consider
Samsung M395T2863QZ4-CF76 1GB

Faster reading speed, GB/s

3 12.1

Average value in the tests

INTENSO 4GB

Reasons to consider
INTENSO 4GB

Below the latency in the PassMark tests, ns

36 104

Around -189% lower latency
Faster write speed, GB/s

9.3 2,404.5

Average value in the tests
Higher memory bandwidth, mbps

17000 6400

Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M395T2863QZ4-CF76 1GB

INTENSO 4GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

104 36
Read speed, GB/s

3,192.0 12.1
Write speed, GB/s

2,404.5 9.3
Memory bandwidth, mbps

6400 17000

Other

Description

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

786 2061

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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