RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Micron Technology CT8G4DFD8213.16FA11 8GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Micron Technology CT8G4DFD8213.16FA11 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
12
Average value in the tests
Reasons to consider
Micron Technology CT8G4DFD8213.16FA11 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
104
Around -271% lower latency
Faster write speed, GB/s
9.1
2,404.5
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
28
Read speed, GB/s
3,192.0
12.0
Write speed, GB/s
2,404.5
9.1
Memory bandwidth, mbps
6400
17000
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
no data
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
786
2347
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Micron Technology CT8G4DFD8213.16FA11 8GB RAM comparisons
Samsung M386B4G70DM0-CMA4 32GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
Samsung M393B1K70CH0-CH9 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
NSITEXE Inc Visenta 16GB
SK Hynix HYMP112U64CP8-Y5 1GB
Corsair CMK128GX4M8A2400C14 16GB
Swissbit MEU25664D6BC2EP-30 2GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
A-DATA Technology DQKD1A08 1GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
G Skill Intl F5-6400J3239G16G 16GB
SpecTek Incorporated 16G 2666 CL 19 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston XJV223-MIE-NX 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CMT16GX4M2Z3200C16 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Samsung M393A1G40EB1-CRC 8GB
SK Hynix HYMP125U64CP8-S6 2GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMK16GX4M2E3200C16 8GB
Report a bug
×
Bug description
Source link