RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Tanbassh 8G 2666MHZ 8GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Tanbassh 8G 2666MHZ 8GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Tanbassh 8G 2666MHZ 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
10.2
Average value in the tests
Reasons to consider
Tanbassh 8G 2666MHZ 8GB
Report a bug
Below the latency in the PassMark tests, ns
50
104
Around -108% lower latency
Faster write speed, GB/s
7.5
2,404.5
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Tanbassh 8G 2666MHZ 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
50
Read speed, GB/s
3,192.0
10.2
Write speed, GB/s
2,404.5
7.5
Memory bandwidth, mbps
6400
21300
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
no data
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
786
2064
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Tanbassh 8G 2666MHZ 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5428-018.A00LF 8GB
Samsung M471A1K43CB1-CRCR 8GB
Samsung M471B5273CH0-CH9 4GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
Corsair CM2X1024-6400C4 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology CT8G4DFS8213.C8FH1 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
G Skill Intl F4-4000C16-16GTZR 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMD16GX4M2C3333C16 8GB
Kingston 8ATF1G64AZ-2G3A1 8GB
Kingston 8ATF1G64AZ-2G3A141 8GB
SK Hynix HYMP112S64CP6-S6 1GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
Kingston 99U5584-005.A00LF 4GB
G Skill Intl F4-2400C17-4GVR 4GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-4000C19-8GTZKW 8GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-2933C16-8GTZRX 8GB
Kingston 9905469-143.A00LF 4GB
Corsair CMW256GX4M8E3200C16 32GB
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-3600C16-16GTRSC 16GB
Kingston 9905403-174.A00LF 2GB
Kingston 9905599-020.A00G 8GB
Report a bug
×
Bug description
Source link