RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-3200C16-16GVS 16GB
Compare
Samsung M4 70T2864QZ3-CF7 1GB vs G Skill Intl F4-3200C16-16GVS 16GB
Overall score
Samsung M4 70T2864QZ3-CF7 1GB
Overall score
G Skill Intl F4-3200C16-16GVS 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T2864QZ3-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
17.5
Average value in the tests
Faster write speed, GB/s
2,201.1
14.8
Average value in the tests
Reasons to consider
G Skill Intl F4-3200C16-16GVS 16GB
Report a bug
Below the latency in the PassMark tests, ns
27
74
Around -174% lower latency
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-3200C16-16GVS 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
74
27
Read speed, GB/s
4,178.4
17.5
Write speed, GB/s
2,201.1
14.8
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
508
3693
Samsung M4 70T2864QZ3-CF7 1GB RAM comparisons
Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMD8GX4M2B4000C19 4GB
G Skill Intl F4-3200C16-16GVS 16GB RAM comparisons
Kingston 9905403-061.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD64GX4M4C3000C15 16GB
A-DATA Technology DOVF1B163G2G 2GB
Samsung M393A1K43BB0-CRC 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Kingston HP37D4U1S8ME-16XR 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Kingston 9965640-015.A00G 32GB
Kingston 9965525-018.A00LF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung V-GeN D4S8GL26A8TL5 8GB
Samsung M393A1G43DB1-CRC 8GB
Samsung M393A2K43CB1-CRC 16GB
A-DATA Technology DOVF1B163G2G 2GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology CT16G4SFD8213.C16FH1 16GB
Kingston 99U5474-038.A00LF 4GB
Kingston KHX21334D4/8G 8GB
Hexon Technology Pte Ltd HEXON 1GB
Maxsun MSD48G30Q3 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-4000C18-8GVK 8GB
SK Hynix HMAA4GU6AJR8N-XN 32GB
SK Hynix HMAA4GS6CJR8N-XN 32GB
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology BLT8G4D30AETA.K16FD 8GB
Report a bug
×
Bug description
Source link