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Samsung M4 70T2953EZ3-CE6 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Samsung M4 70T2953EZ3-CE6 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Overall score
star star star star star
Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Differences Specifications Comments

Differences

Samsung M4 70T2953EZ3-CE6 1GB Reasons to consider
Samsung M4 70T2953EZ3-CE6 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 20.4
    Average value in the tests
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    18 left arrow 73
    Around -306% lower latency
  • Faster write speed, GB/s
    18.1 left arrow 1,423.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 5300
    Around 3.62 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M4 70T2953EZ3-CE6 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    73 left arrow 18
  • Read speed, GB/s
    3,510.5 left arrow 20.4
  • Write speed, GB/s
    1,423.3 left arrow 18.1
  • Memory bandwidth, mbps
    5300 left arrow 19200
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    476 left arrow 3529

Samsung M4 70T2953EZ3-CE6 1GB RAM comparisons

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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