RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-2800C15-4GVRB 4GB
Compare
Samsung M471A5244CB0-CWE 4GB vs G Skill Intl F4-2800C15-4GVRB 4GB
Overall score
Samsung M471A5244CB0-CWE 4GB
Overall score
G Skill Intl F4-2800C15-4GVRB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A5244CB0-CWE 4GB
Report a bug
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
G Skill Intl F4-2800C15-4GVRB 4GB
Report a bug
Below the latency in the PassMark tests, ns
22
38
Around -73% lower latency
Faster reading speed, GB/s
17.6
15.5
Average value in the tests
Faster write speed, GB/s
13.3
12.0
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-2800C15-4GVRB 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
38
22
Read speed, GB/s
15.5
17.6
Write speed, GB/s
12.0
13.3
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2283
3038
Samsung M471A5244CB0-CWE 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2800C15-4GVRB 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
PNY Electronics PNY 2GB
G Skill Intl F4-3000C14-16GTZR 16GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-2800C15-4GVRB 4GB
Samsung DDR3 8GB 1600MHz 8GB
Gloway International (HK) STK4U2400D17041C 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3200C16-8GTRS 8GB
SK Hynix HMT451S6DFR8A-PB 4GB
Kingston KHX4266C19D4/8GX 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
Kingston HX316C10F/8 8GB
Smart Modular SF4641G8CK8I8HLSBG 8GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT8G4DFS824A.C8FHD1 8GB
Corsair CMY8GX3M2A2666C10 4GB
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB
Samsung M395T2863QZ4-CF76 1GB
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Mushkin MRA4S320GJJM32G 32GB
Kingston 99U5469-046.A00LF 4GB
G Skill Intl F4-3200C15-8GVK 8GB
Samsung M378B5673EH1-CF8 2GB
Micron Technology AFSD416ES1P 16GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BLS4G4D240FSC.8FBR2 4GB
Report a bug
×
Bug description
Source link