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Samsung M471A5244CB0-CWE 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Compare
Samsung M471A5244CB0-CWE 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Overall score
Samsung M471A5244CB0-CWE 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A5244CB0-CWE 4GB
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Faster reading speed, GB/s
15.5
13.8
Average value in the tests
Faster write speed, GB/s
12.0
10.1
Average value in the tests
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
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Below the latency in the PassMark tests, ns
28
38
Around -36% lower latency
Specifications
Complete list of technical specifications
Samsung M471A5244CB0-CWE 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
38
28
Read speed, GB/s
15.5
13.8
Write speed, GB/s
12.0
10.1
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2283
2179
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
0 ns
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