RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A5244CB0-CWE 4GB
InnoDisk Corporation 16GB
Compare
Samsung M471A5244CB0-CWE 4GB vs InnoDisk Corporation 16GB
Overall score
Samsung M471A5244CB0-CWE 4GB
Overall score
InnoDisk Corporation 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A5244CB0-CWE 4GB
Report a bug
Faster reading speed, GB/s
15.5
7.7
Average value in the tests
Faster write speed, GB/s
12.0
8.2
Average value in the tests
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
InnoDisk Corporation 16GB
Report a bug
Specifications
Complete list of technical specifications
Samsung M471A5244CB0-CWE 4GB
InnoDisk Corporation 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
38
38
Read speed, GB/s
15.5
7.7
Write speed, GB/s
12.0
8.2
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2283
2163
Samsung M471A5244CB0-CWE 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
InnoDisk Corporation 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99P5474-014.A00LF 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
Kingston 9905471-001.A01LF 2GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
Samsung M471A5244CB0-CWE 4GB
InnoDisk Corporation 16GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4DFS6266.M4FE 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Smart Modular SF4641G8CK8I8HLSBG 8GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3600C16-32GTZR 32GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kllisre M471A3243BB0-CP50 16GB
A-DATA Technology ADOVE1A0834E 1GB
Corsair CMU32GX4M4C3200C16 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-4000C18-16GTZN 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston 99U5624-003.A00G 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
AMD R538G1601U2S 8GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
Report a bug
×
Bug description
Source link