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Samsung M471B5173EB0-YK0 4GB
Avant Technology W644GU44J2320NH 32GB

Samsung M471B5173EB0-YK0 4GB vs Avant Technology W644GU44J2320NH 32GB

Overall score
star star star star star
Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

Overall score
star star star star star
Avant Technology W644GU44J2320NH 32GB

Avant Technology W644GU44J2320NH 32GB

Differences Specifications Comments

Differences

Samsung M471B5173EB0-YK0 4GB Reasons to consider
Samsung M471B5173EB0-YK0 4GB
Report a bug
Avant Technology W644GU44J2320NH 32GB Reasons to consider
Avant Technology W644GU44J2320NH 32GB
Report a bug
  • Below the latency in the PassMark tests, ns
    32 left arrow 44
    Around -38% lower latency
  • Faster reading speed, GB/s
    16.7 left arrow 13
    Average value in the tests
  • Faster write speed, GB/s
    15.8 left arrow 8.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5173EB0-YK0 4GB
Avant Technology W644GU44J2320NH 32GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    44 left arrow 32
  • Read speed, GB/s
    13.0 left arrow 16.7
  • Write speed, GB/s
    8.2 left arrow 15.8
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2069 left arrow 3659

Samsung M471B5173EB0-YK0 4GB RAM comparisons

SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB

Avant Technology W644GU44J2320NH 32GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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