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Samsung M471B5173EB0-YK0 4GB
Avant Technology W644GU44J2320NH 32GB

Samsung M471B5173EB0-YK0 4GB vs Avant Technology W644GU44J2320NH 32GB

总分
star star star star star
Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

总分
star star star star star
Avant Technology W644GU44J2320NH 32GB

Avant Technology W644GU44J2320NH 32GB

差异 规格 评论

差异

Samsung M471B5173EB0-YK0 4GB 需要考虑的原因
Samsung M471B5173EB0-YK0 4GB
报告一个错误
Avant Technology W644GU44J2320NH 32GB 需要考虑的原因
Avant Technology W644GU44J2320NH 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 44
    左右 -38% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 13
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173EB0-YK0 4GB
Avant Technology W644GU44J2320NH 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 32
  • 读取速度，GB/s
    13.0 left arrow 16.7
  • 写入速度，GB/s
    8.2 left arrow 15.8
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2069 left arrow 3659

Samsung M471B5173EB0-YK0 4GB RAM的比较

SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB

Avant Technology W644GU44J2320NH 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
Avant Technology W644GU44J2320NH 32GB
Avant Technology W644GU44J2320NH 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
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内存RAM
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内存RAM
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Kingston 9965600-005.A00G 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
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Crucial Technology CT16G4DFD8213.C16FH1 16GB
内存RAM
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G Skill Intl F4-4266C19-8GTRG 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
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Corsair CMT16GX4M2K4266C19 8GB
内存RAM
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内存RAM
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Heoriady HX2666DT8G-TD 8GB
内存RAM
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SK Hynix HYMP112U64CP8-S6 1GB
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G Skill Intl F4-3466C18-8GSXW 8GB
内存RAM