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Samsung M471B5173EB0-YK0 4GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

Samsung M471B5173EB0-YK0 4GB vs Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

Overall score
star star star star star
Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

Overall score
star star star star star
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

Differences Specifications Comments

Differences

Samsung M471B5173EB0-YK0 4GB Reasons to consider
Samsung M471B5173EB0-YK0 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    44 left arrow 59
    Around 25% lower latency
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB Reasons to consider
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Report a bug
  • Faster reading speed, GB/s
    17.2 left arrow 13
    Average value in the tests
  • Faster write speed, GB/s
    9.7 left arrow 8.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5173EB0-YK0 4GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    44 left arrow 59
  • Read speed, GB/s
    13.0 left arrow 17.2
  • Write speed, GB/s
    8.2 left arrow 9.7
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2069 left arrow 2181

Samsung M471B5173EB0-YK0 4GB RAM comparisons

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Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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