RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173QH0-YK0 4GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Compare
Samsung M471B5173QH0-YK0 4GB vs Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Overall score
Samsung M471B5173QH0-YK0 4GB
Overall score
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5173QH0-YK0 4GB
Report a bug
Reasons to consider
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Report a bug
Below the latency in the PassMark tests, ns
40
45
Around -13% lower latency
Faster reading speed, GB/s
13.4
12.3
Average value in the tests
Faster write speed, GB/s
11.3
8.0
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5173QH0-YK0 4GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
40
Read speed, GB/s
12.3
13.4
Write speed, GB/s
8.0
11.3
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1992
2362
Samsung M471B5173QH0-YK0 4GB RAM comparisons
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5173QH0-YK0 4GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HMA41GU6MFR8N-TF 8GB
Kingston ACR16D3LS1KNG/4G 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Samsung 1600 CL10 Series 8GB
Apacer Technology 78.C1GMM.BAC0B 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Micron Technology 8ATF1G64AZ-2G3H1 8GB
Kingston 9965525-155.A00LF 8GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3000C16-16GRS 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK64GX4M4E3200C16 16GB
Samsung M4 70T2953EZ3-CE6 1GB
Panram International Corporation W4U2400PS-4G 4GB
Samsung M378A2K43DB1-CTD 16GB
Samsung M378A2K43DB1-CVF 16GB
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M471A5244CB0-CWE 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2933C14-8GFX 8GB
Kingston 99U5584-005.A00LF 4GB
G Skill Intl F4-2400C14-16GVK 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMW8GX4M1D3000C16 8GB
Report a bug
×
Bug description
Source link