RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5273CH0-CH9 4GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
Compare
Samsung M471B5273CH0-CH9 4GB vs Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
Overall score
Samsung M471B5273CH0-CH9 4GB
Overall score
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273CH0-CH9 4GB
Report a bug
Reasons to consider
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
Report a bug
Below the latency in the PassMark tests, ns
27
48
Around -78% lower latency
Faster reading speed, GB/s
17.6
8.9
Average value in the tests
Faster write speed, GB/s
17.4
5.9
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273CH0-CH9 4GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
48
27
Read speed, GB/s
8.9
17.6
Write speed, GB/s
5.9
17.4
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1420
3845
Samsung M471B5273CH0-CH9 4GB RAM comparisons
G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Elpida EBJ17RG4EFWA-DJ-F 16GB
G Skill Intl F4-3200C16-8GTZN 8GB
takeMS International AG TMS2GB264D083805EV 2GB
Corsair CMT16GX4M2C3466C16 8GB
Samsung M471B5273CH0-CH9 4GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
AMD R538G1601U2S-UO 8GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Kingston ACR256X64D3S1333C9 2GB
Mushkin MR[A/B]4U266GHHF8G 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Patriot Memory (PDP Systems) PSD44G266681 4GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology CT32G48C40U5.M16A1 32GB
Samsung M393B2G70BH0-YK0 16GB
Lexar Co Limited LD4AU016G-H2666G 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Gloway International (HK) STK4U2400D17042C 4GB
Samsung M471B5273EB0-CK0 4GB
Kingston X75V1H-MIE 32GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
SK Hynix HMA451U6AFR8N-TF 4GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4000C18-16GVK 16GB
takeMS International AG TMS2GB264D083805EV 2GB
Samsung M391A1K43BB2-CTD 8GB
Report a bug
×
Bug description
Source link