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Samsung M471B5273CH0-CH9 4GB
InnoDisk Corporation 16GB
Compare
Samsung M471B5273CH0-CH9 4GB vs InnoDisk Corporation 16GB
Overall score
Samsung M471B5273CH0-CH9 4GB
Overall score
InnoDisk Corporation 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273CH0-CH9 4GB
Report a bug
Faster reading speed, GB/s
8.9
7.7
Average value in the tests
Reasons to consider
InnoDisk Corporation 16GB
Report a bug
Below the latency in the PassMark tests, ns
38
48
Around -26% lower latency
Faster write speed, GB/s
8.2
5.9
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273CH0-CH9 4GB
InnoDisk Corporation 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
48
38
Read speed, GB/s
8.9
7.7
Write speed, GB/s
5.9
8.2
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1420
2163
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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