RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5673FH0-CF8 2GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
Compare
Samsung M471B5673FH0-CF8 2GB vs Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
Overall score
Samsung M471B5673FH0-CF8 2GB
Overall score
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
Reasons to consider
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
Report a bug
Below the latency in the PassMark tests, ns
24
30
Around -25% lower latency
Faster reading speed, GB/s
16.6
10.6
Average value in the tests
Faster write speed, GB/s
12.4
6.8
Average value in the tests
Higher memory bandwidth, mbps
17000
8500
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
30
24
Read speed, GB/s
10.6
16.6
Write speed, GB/s
6.8
12.4
Memory bandwidth, mbps
8500
17000
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-17000, 1.2V, CAS Supported: 12 14 15
Timings / Clock speed
7-7-7-20 / 1066 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1479
3037
Samsung M471B5673FH0-CF8 2GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB RAM comparisons
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C16-16GVKA 16GB
Samsung M471B5673FH0-CF8 2GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
Samsung M471B5173QH0-YK0 4GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
Samsung M471B5173DB0-YK0 4GB
Kingston 9965604-027.D00G 8GB
Apacer Technology 78.A1GC6.9H10C 2GB
Kingston 9905744-006.A00G 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3600C19-16GSXF 16GB
Kingston KVR533D2N4 512MB
V-GEN D4H8GS24A8 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-4266C17-16GTZRB 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4X8GF2400C16K4 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-4000C17-8GTZR 8GB
Kingston 99U5474-023.A00LF 4GB
Kingston 9905734-063.A00G 32GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Patriot Memory (PDP Systems) PSD48G266682 8GB
Kingston 9905403-061.A00LF 2GB
V-Color Technology Inc. TD416G26D819-VC 16GB
Report a bug
×
Bug description
Source link