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Samsung M471B5773DH0-CH9 2GB
G Skill Intl F4-3200C15-16GVK 16GB

Samsung M471B5773DH0-CH9 2GB vs G Skill Intl F4-3200C15-16GVK 16GB

Overall score
star star star star star
Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Overall score
star star star star star
G Skill Intl F4-3200C15-16GVK 16GB

G Skill Intl F4-3200C15-16GVK 16GB

Differences Specifications Comments

Differences

Samsung M471B5773DH0-CH9 2GB Reasons to consider
Samsung M471B5773DH0-CH9 2GB
Report a bug
G Skill Intl F4-3200C15-16GVK 16GB Reasons to consider
G Skill Intl F4-3200C15-16GVK 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    34 left arrow 43
    Around -26% lower latency
  • Faster reading speed, GB/s
    14.9 left arrow 11
    Average value in the tests
  • Faster write speed, GB/s
    12.6 left arrow 7.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5773DH0-CH9 2GB
G Skill Intl F4-3200C15-16GVK 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    43 left arrow 34
  • Read speed, GB/s
    11.0 left arrow 14.9
  • Write speed, GB/s
    7.2 left arrow 12.6
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1393 left arrow 3206

Samsung M471B5773DH0-CH9 2GB RAM comparisons

Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-3200C15-16GVK 16GB RAM comparisons

Kingston 9905403-444.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
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