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Samsung M471B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Samsung M471B5773DH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Overall score
star star star star star
Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Differences Specifications Comments

Differences

Samsung M471B5773DH0-CH9 2GB Reasons to consider
Samsung M471B5773DH0-CH9 2GB
Report a bug
  • Faster reading speed, GB/s
    11 left arrow 8.8
    Average value in the tests
  • Faster write speed, GB/s
    7.2 left arrow 5.6
    Average value in the tests
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    30 left arrow 43
    Around -43% lower latency

Specifications

Complete list of technical specifications
Samsung M471B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    43 left arrow 30
  • Read speed, GB/s
    11.0 left arrow 8.8
  • Write speed, GB/s
    7.2 left arrow 5.6
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    1393 left arrow 1344

Samsung M471B5773DH0-CH9 2GB RAM comparisons

Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB RAM comparisons

Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C17-8GTZRB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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