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Samsung M471B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Compare
Samsung M471B5773DH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Overall score
Samsung M471B5773DH0-CH9 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5773DH0-CH9 2GB
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Faster reading speed, GB/s
11
8.8
Average value in the tests
Faster write speed, GB/s
7.2
5.6
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Report a bug
Below the latency in the PassMark tests, ns
30
43
Around -43% lower latency
Specifications
Complete list of technical specifications
Samsung M471B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
43
30
Read speed, GB/s
11.0
8.8
Write speed, GB/s
7.2
5.6
Memory bandwidth, mbps
10600
10600
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Timings / Clock speed
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
1393
1344
Samsung M471B5773DH0-CH9 2GB RAM comparisons
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB RAM comparisons
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C17-8GTZRB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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