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Samsung M471B5773DH0-CK0 2GB
Corsair CMN32GX4M2Z4600C18 16GB

Samsung M471B5773DH0-CK0 2GB vs Corsair CMN32GX4M2Z4600C18 16GB

Overall score
star star star star star
Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Overall score
star star star star star
Corsair CMN32GX4M2Z4600C18 16GB

Corsair CMN32GX4M2Z4600C18 16GB

Differences Specifications Comments

Differences

Samsung M471B5773DH0-CK0 2GB Reasons to consider
Samsung M471B5773DH0-CK0 2GB
Report a bug
Corsair CMN32GX4M2Z4600C18 16GB Reasons to consider
Corsair CMN32GX4M2Z4600C18 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 27
    Around -8% lower latency
  • Faster reading speed, GB/s
    17.4 left arrow 12.2
    Average value in the tests
  • Faster write speed, GB/s
    16.6 left arrow 7.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5773DH0-CK0 2GB
Corsair CMN32GX4M2Z4600C18 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 25
  • Read speed, GB/s
    12.2 left arrow 17.4
  • Write speed, GB/s
    7.8 left arrow 16.6
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    1763 left arrow 3908

Samsung M471B5773DH0-CK0 2GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB

Corsair CMN32GX4M2Z4600C18 16GB RAM comparisons

PNY Electronics PNY 2GB
Kingston 9905403-444.A00LF 4GB
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