RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HYMP164U64CP6-Y5 512MB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Compare
SK Hynix HYMP164U64CP6-Y5 512MB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Overall score
SK Hynix HYMP164U64CP6-Y5 512MB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
SK Hynix HYMP164U64CP6-Y5 512MB
Report a bug
Faster write speed, GB/s
8,883.4
13.0
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
44
Around -91% lower latency
Faster reading speed, GB/s
17.2
14
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
SK Hynix HYMP164U64CP6-Y5 512MB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
44
23
Read speed, GB/s
14,740.4
17.2
Write speed, GB/s
8,883.4
13.0
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2811
3004
SK Hynix HYMP164U64CP6-Y5 512MB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP112U72CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
G Skill Intl F4-2133C15-16GRS 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Chun Well Technology Holding Limited D4U0826190B 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston 9905624-023.A00G 8GB
A-DATA Technology DQVE1908 512MB
Crucial Technology BLS16G4D26BFSC.16FBD 16GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3300C16-8GTZ 8GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMK16GX4M2K4266C19 8GB
Samsung M393B5170FH0-CK0 4GB
Hyundai Inc GR26C16S8K2HU416 8GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology CT16G4DFD824A.M16FJ 16GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT16G4S24AM.M16FE 16GB
Samsung M471B5173QH0-YK0 4GB
Apacer Technology 78.BAGN8.AZC0B 4GB
Kingston K1N7HK-ELC 2GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3466C16-4GVK 4GB
Report a bug
×
Bug description
Source link