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Strontium EVMT8G1600U86S 8GB
AMD R744G2606U1S 4GB

Strontium EVMT8G1600U86S 8GB vs AMD R744G2606U1S 4GB

Overall score
star star star star star
Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Overall score
star star star star star
AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

Differences Specifications Comments

Differences

Strontium EVMT8G1600U86S 8GB Reasons to consider
Strontium EVMT8G1600U86S 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    31 left arrow 76
    Around 59% lower latency
AMD R744G2606U1S 4GB Reasons to consider
AMD R744G2606U1S 4GB
Report a bug
  • Faster reading speed, GB/s
    15.7 left arrow 11.7
    Average value in the tests
  • Faster write speed, GB/s
    8.7 left arrow 7.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Strontium EVMT8G1600U86S 8GB
AMD R744G2606U1S 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    31 left arrow 76
  • Read speed, GB/s
    11.7 left arrow 15.7
  • Write speed, GB/s
    7.2 left arrow 8.7
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1990 left arrow 1809

Strontium EVMT8G1600U86S 8GB RAM comparisons

Strontium EVMT8G1333U86S 8GB
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AMD R744G2606U1S 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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