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TwinMOS 9DNPBNZB-TATP 4GB
Memphis Electronic D4SO1G724GI-A58SD 8GB

TwinMOS 9DNPBNZB-TATP 4GB vs Memphis Electronic D4SO1G724GI-A58SD 8GB

Overall score
star star star star star
TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Overall score
star star star star star
Memphis Electronic D4SO1G724GI-A58SD 8GB

Memphis Electronic D4SO1G724GI-A58SD 8GB

Differences Specifications Comments

Differences

TwinMOS 9DNPBNZB-TATP 4GB Reasons to consider
TwinMOS 9DNPBNZB-TATP 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 30
    Around 17% lower latency
  • Faster reading speed, GB/s
    12.5 left arrow 11.7
    Average value in the tests
  • Faster write speed, GB/s
    8.4 left arrow 6.6
    Average value in the tests
Memphis Electronic D4SO1G724GI-A58SD 8GB Reasons to consider
Memphis Electronic D4SO1G724GI-A58SD 8GB
Report a bug
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
TwinMOS 9DNPBNZB-TATP 4GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 30
  • Read speed, GB/s
    12.5 left arrow 11.7
  • Write speed, GB/s
    8.4 left arrow 6.6
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2180 left arrow 1832

TwinMOS 9DNPBNZB-TATP 4GB RAM comparisons

Samsung M378B2873FHS-CH9 1GB
Kingston KHX2666C16/8G 8GB

Memphis Electronic D4SO1G724GI-A58SD 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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