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TwinMOS 9DNPBNZB-TATP 4GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB

TwinMOS 9DNPBNZB-TATP 4GB vs Micron Technology 36ASF4G72PZ-2G1A1 32GB

Overall score
star star star star star
TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Overall score
star star star star star
Micron Technology 36ASF4G72PZ-2G1A1 32GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

Differences Specifications Comments

Differences

TwinMOS 9DNPBNZB-TATP 4GB Reasons to consider
TwinMOS 9DNPBNZB-TATP 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 37
    Around 32% lower latency
  • Faster reading speed, GB/s
    12.5 left arrow 9.6
    Average value in the tests
  • Faster write speed, GB/s
    8.4 left arrow 7.8
    Average value in the tests
Micron Technology 36ASF4G72PZ-2G1A1 32GB Reasons to consider
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
TwinMOS 9DNPBNZB-TATP 4GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 37
  • Read speed, GB/s
    12.5 left arrow 9.6
  • Write speed, GB/s
    8.4 left arrow 7.8
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2180 left arrow 2082

TwinMOS 9DNPBNZB-TATP 4GB RAM comparisons

Samsung M378B2873FHS-CH9 1GB
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Micron Technology 36ASF4G72PZ-2G1A1 32GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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