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Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

Diferencias Especificaciones Comentarios

Especificaciones

Lista completa de especificaciones técnicas
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
Principales características
  • Tipo de memoria
    DDR3 left arrow DDR3
  • Latencia en PassMark, ns
    29 left arrow 29
  • Velocidad de lectura, GB/s
    12.2 left arrow 12.2
  • Velocidad de escritura, GB/s
    8.8 left arrow 8.8
  • Ancho de banda de la memoria, mbps
    12800 left arrow 12800
Other
  • Descripción
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Tiempos / Velocidad del reloj
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Clasificación PassMark (Cuanto más, mejor)
    2036 left arrow 2036

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB Comparaciones de la memoria RAM

SK Hynix HMT425S6AFR6A-PB 2GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB Comparaciones de la memoria RAM

SK Hynix HMT425S6AFR6A-PB 2GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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