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Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
Comparez
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
Signaler un bogue
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
Signaler un bogue
Spécifications
Liste complète des spécifications techniques
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
Principales caractéristiques
Type de mémoire
DDR3
DDR3
Latence dans PassMark, ns
29
29
Vitesse de lecture, GB/s
12.2
12.2
Vitesse d'écriture, GB/s
8.8
8.8
Largeur de bande de la mémoire, mbps
12800
12800
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Timings / Vitesse d'horloge
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
Classement PassMark (Plus il y en a, mieux c'est)
2036
2036
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB Comparaison des RAM
SK Hynix HMT425S6AFR6A-PB 2GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB Comparaison des RAM
SK Hynix HMT425S6AFR6A-PB 2GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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Signaler un bogue
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