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Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

Note globale
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Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

Note globale
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

Différences Spécifications Commentaires

Spécifications

Liste complète des spécifications techniques
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
Principales caractéristiques
  • Type de mémoire
    DDR3 left arrow DDR3
  • Latence dans PassMark, ns
    29 left arrow 29
  • Vitesse de lecture, GB/s
    12.2 left arrow 12.2
  • Vitesse d'écriture, GB/s
    8.8 left arrow 8.8
  • Largeur de bande de la mémoire, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Timings / Vitesse d'horloge
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classement PassMark (Plus il y en a, mieux c'est)
    2036 left arrow 2036

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB Comparaison des RAM

SK Hynix HMT425S6AFR6A-PB 2GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB Comparaison des RAM

SK Hynix HMT425S6AFR6A-PB 2GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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