Samsung M3 93T5750CZA-CE6 2GB vs V-GEN D4R8GL24A8R 8GB

Puntuación global

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Puntuación global

V-GEN D4R8GL24A8R 8GB

V-GEN D4R8GL24A8R 8GB

Diferencias Especificaciones Comentarios

Diferencias

Samsung M3 93T5750CZA-CE6 2GB

Razones a tener en cuenta
Samsung M3 93T5750CZA-CE6 2GB

Informar de un error

Mayor velocidad de lectura, GB/s

3 15.5

Valor medio en las pruebas

V-GEN D4R8GL24A8R 8GB

Razones a tener en cuenta
V-GEN D4R8GL24A8R 8GB

Informar de un error

Mayor velocidad de escritura, GB/s

8.2 2,622.0

Valor medio en las pruebas
Mayor ancho de banda de la memoria, mbps

19200 5300

En 3.62 mayor ancho de banda

Especificaciones

Lista completa de especificaciones técnicas

Samsung M3 93T5750CZA-CE6 2GB

V-GEN D4R8GL24A8R 8GB

Principales características

Tipo de memoria

DDR2 DDR4
Latencia en PassMark, ns

77 77
Velocidad de lectura, GB/s

3,405.2 15.5
Velocidad de escritura, GB/s

2,622.0 8.2
Ancho de banda de la memoria, mbps

5300 19200

Other

Descripción

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Tiempos / Velocidad del reloj

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Clasificación PassMark (Cuanto más, mejor)

763 1809

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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