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Hynix Semiconductor (Hyundai Electronics) HMT451B6AFR8A-PB 4GB
A-DATA Technology AM1L16BC8R2-B1QS 8GB
Comparez
Hynix Semiconductor (Hyundai Electronics) HMT451B6AFR8A-PB 4GB vs A-DATA Technology AM1L16BC8R2-B1QS 8GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMT451B6AFR8A-PB 4GB
Note globale
A-DATA Technology AM1L16BC8R2-B1QS 8GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMT451B6AFR8A-PB 4GB
Signaler un bogue
En dessous de la latence dans les tests PassMark, ns
27
45
Autour de 40% latence réduite
Raisons de considérer
A-DATA Technology AM1L16BC8R2-B1QS 8GB
Signaler un bogue
Vitesse de lecture plus rapide, GB/s
12
11.3
Valeur moyenne dans les tests
Vitesse d'écriture plus rapide, GB/s
8.1
7.3
Valeur moyenne dans les tests
Spécifications
Liste complète des spécifications techniques
Hynix Semiconductor (Hyundai Electronics) HMT451B6AFR8A-PB 4GB
A-DATA Technology AM1L16BC8R2-B1QS 8GB
Principales caractéristiques
Type de mémoire
DDR3
DDR3
Latence dans PassMark, ns
27
45
Vitesse de lecture, GB/s
11.3
12.0
Vitesse d'écriture, GB/s
7.3
8.1
Largeur de bande de la mémoire, mbps
12800
12800
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Timings / Vitesse d'horloge
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
Classement PassMark (Plus il y en a, mieux c'est)
1965
2127
Hynix Semiconductor (Hyundai Electronics) HMT451B6AFR8A-PB 4GB Comparaison des RAM
Kingston 99U5428-063.A00LF 8GB
A-DATA Technology AM1L16BC8R2-B1QS 8GB Comparaison des RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Essencore Limited KD44GU481-26N1600 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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Signaler un bogue
×
Bug description
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