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Nanya Technology M2F4GH64CB8HB6N-DI 4GB
Crucial Technology CT51264BA160B.C16F 4GB

Nanya Technology M2F4GH64CB8HB6N-DI 4GB vs Crucial Technology CT51264BA160B.C16F 4GB

Note globale
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Nanya Technology M2F4GH64CB8HB6N-DI 4GB

Nanya Technology M2F4GH64CB8HB6N-DI 4GB

Note globale
star star star star star
Crucial Technology CT51264BA160B.C16F 4GB

Crucial Technology CT51264BA160B.C16F 4GB

Différences Spécifications Commentaires

Différences

Nanya Technology M2F4GH64CB8HB6N-DI 4GB Raisons de considérer
Nanya Technology M2F4GH64CB8HB6N-DI 4GB
Signaler un bogue
  • En dessous de la latence dans les tests PassMark, ns
    25 left arrow 41
    Autour de 39% latence réduite
  • Vitesse de lecture plus rapide, GB/s
    15.2 left arrow 14.3
    Valeur moyenne dans les tests
Crucial Technology CT51264BA160B.C16F 4GB Raisons de considérer
Crucial Technology CT51264BA160B.C16F 4GB
Signaler un bogue

Spécifications

Liste complète des spécifications techniques
Nanya Technology M2F4GH64CB8HB6N-DI 4GB
Crucial Technology CT51264BA160B.C16F 4GB
Principales caractéristiques
  • Type de mémoire
    DDR3 left arrow DDR3
  • Latence dans PassMark, ns
    25 left arrow 41
  • Vitesse de lecture, GB/s
    15.2 left arrow 14.3
  • Vitesse d'écriture, GB/s
    9.4 left arrow 9.4
  • Largeur de bande de la mémoire, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Timings / Vitesse d'horloge
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classement PassMark (Plus il y en a, mieux c'est)
    2415 left arrow 2142

Nanya Technology M2F4GH64CB8HB6N-DI 4GB Comparaison des RAM

Samsung M393B2G70BH0-CK0 16GB
A-DATA Technology AM2L16BC4R1-B0WS 4GB

Crucial Technology CT51264BA160B.C16F 4GB Comparaison des RAM

SK Hynix HMT351U6CFR8C-PB 4GB
Corsair CMSO4GX3M1C1600C11 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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