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Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB vs Samsung M471A1K43DB1-CWE 8GB

Note globale
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Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Note globale
star star star star star
Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Différences Spécifications Commentaires

Spécifications

Liste complète des spécifications techniques
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
Principales caractéristiques
  • Type de mémoire
    DDR4 left arrow DDR4
  • Latence dans PassMark, ns
    33 left arrow 33
  • Vitesse de lecture, GB/s
    16.1 left arrow 16.1
  • Vitesse d'écriture, GB/s
    13.0 left arrow 13.0
  • Largeur de bande de la mémoire, mbps
    25600 left arrow 25600
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Vitesse d'horloge
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Classement PassMark (Plus il y en a, mieux c'est)
    2987 left arrow 2987

Samsung M471A1K43DB1-CWE 8GB Comparaison des RAM

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M471A1K43DB1-CWE 8GB Comparaison des RAM

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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