Samsung M471A1K43DB1-CWE 8GB vs Samsung M471A1K43DB1-CWE 8GB

总分

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

总分

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

差异规格评论

差异

Samsung M471A1K43DB1-CWE 8GB

需要考虑的原因
Samsung M471A1K43DB1-CWE 8GB

报告一个错误

Samsung M471A1K43DB1-CWE 8GB

需要考虑的原因
Samsung M471A1K43DB1-CWE 8GB

报告一个错误

规格

完整的技术规格清单

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 33
读取速度，GB/s

16.1 16.1
写入速度，GB/s

13.0 13.0
内存带宽，mbps

25600 25600

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2987 2987

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR4 2400 2OZ 8GB

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Corsair CMD32GX4M4B3733C17 8GB

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Elpida EBE21UE8ACUA-8G-E 2GB

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Kingston 9905403-444.A00LF 4GB

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Crucial Technology BLE8G4D32BEEAK.K8FB 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston 9965433-034.A00LF 4GB

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Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

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Corsair CMK16GX4M4B3000C15 4GB

Corsair CMK16GX4M4B3000C15 4GB

SK Hynix HMT325S6BFR8C-H9 2GB

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Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMSX8GX4M1A2400C16 8GB

Corsair CMSX8GX4M1A2400C16 8GB

SK Hynix HMT41GS6MFR8C-PB 8GB

SK Hynix HMT41GS6MFR8C-PB 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-4200C19-4GTZ 4GB

G Skill Intl F4-4200C19-4GTZ 4GB