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Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB vs Samsung M471A1K43DB1-CWE 8GB

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Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Punteggio complessivo
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Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Differenze Specifiche tecniche Commenti

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR4 left arrow DDR4
  • Latenza in PassMark, ns
    33 left arrow 33
  • Velocità di lettura, GB/s
    16.1 left arrow 16.1
  • Velocità di scrittura, GB/s
    13.0 left arrow 13.0
  • Larghezza di banda della memoria, mbps
    25600 left arrow 25600
Other
  • Descrizione
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Temporizzazioni / Velocità di clock
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Classifica PassMark (più sono, meglio è)
    2987 left arrow 2987

Samsung M471A1K43DB1-CWE 8GB Confronto tra le RAM

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M471A1K43DB1-CWE 8GB Confronto tra le RAM

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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