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Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
Compare
Samsung M471A1K43DB1-CWE 8GB vs Samsung M471A1K43DB1-CWE 8GB
Overall score
Samsung M471A1K43DB1-CWE 8GB
Overall score
Samsung M471A1K43DB1-CWE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A1K43DB1-CWE 8GB
Report a bug
Reasons to consider
Samsung M471A1K43DB1-CWE 8GB
Report a bug
Specifications
Complete list of technical specifications
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
33
Read speed, GB/s
16.1
16.1
Write speed, GB/s
13.0
13.0
Memory bandwidth, mbps
25600
25600
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2987
2987
Samsung M471A1K43DB1-CWE 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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Samsung M471A1K43DB1-CWE 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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