Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Corsair CMSO4GX4M1A2133C15 4GB

Punteggio complessivo

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Punteggio complessivo

Corsair CMSO4GX4M1A2133C15 4GB

Corsair CMSO4GX4M1A2133C15 4GB

Differenze Specifiche tecniche Commenti

Differenze

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Velocità di lettura più elevata, GB/s

12.4 12.2

Valore medio nei test
Velocità di scrittura più elevata, GB/s

9.6 8.3

Valore medio nei test

Corsair CMSO4GX4M1A2133C15 4GB

Motivi da considerare
Corsair CMSO4GX4M1A2133C15 4GB

Larghezza di banda di memoria superiore, mbps

17000 12800

Intorno 1.33 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Corsair CMSO4GX4M1A2133C15 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

28 28
Velocità di lettura, GB/s

12.4 12.2
Velocità di scrittura, GB/s

9.6 8.3
Larghezza di banda della memoria, mbps

12800 17000

Other

Descrizione

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

2329 2018

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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