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Kingston KF3200C20S4/8G 8GB
Samsung M471A1K43EB1-CWE 8GB

Kingston KF3200C20S4/8G 8GB vs Samsung M471A1K43EB1-CWE 8GB

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Kingston KF3200C20S4/8G 8GB

Kingston KF3200C20S4/8G 8GB

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Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

Differenze Specifiche tecniche Commenti

Differenze

Kingston KF3200C20S4/8G 8GB Motivi da considerare
Kingston KF3200C20S4/8G 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    43 left arrow 46
    Intorno 7% latenza inferiore
  • Velocità di scrittura più elevata, GB/s
    13.3 left arrow 12.4
    Valore medio nei test
Samsung M471A1K43EB1-CWE 8GB Motivi da considerare
Samsung M471A1K43EB1-CWE 8GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    16 left arrow 15.4
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Kingston KF3200C20S4/8G 8GB
Samsung M471A1K43EB1-CWE 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR4 left arrow DDR4
  • Latenza in PassMark, ns
    43 left arrow 46
  • Velocità di lettura, GB/s
    15.4 left arrow 16.0
  • Velocità di scrittura, GB/s
    13.3 left arrow 12.4
  • Larghezza di banda della memoria, mbps
    25600 left arrow 25600
Other
  • Descrizione
    PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Temporizzazioni / Velocità di clock
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Classifica PassMark (più sono, meglio è)
    2776 left arrow 2660

Kingston KF3200C20S4/8G 8GB Confronto tra le RAM

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M471A1K43EB1-CWE 8GB Confronto tra le RAM

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Memoria RAM
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